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首页> 外文期刊>Journal of Applied Physics >Grain size dependence of coercivity in magnetic metal-insulator nanogranular films with uniaxial magnetic anisotropy
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Grain size dependence of coercivity in magnetic metal-insulator nanogranular films with uniaxial magnetic anisotropy

机译:具有单轴磁各向异性的磁性金属-绝缘体纳米颗粒薄膜中矫顽力的晶粒尺寸依赖性

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摘要

Excellent soft magnetic properties and appropriate uniaxial magnetic anisotropy field have been achieved in a wide metal volume fraction (x) range for as-deposited (Fe65Co35)x(SiO2)1-x granular films fabricated by magnetron sputtering. With decreasing x from 0.86 to 0.53, the coercive force of easy axis Hce decreases clearly and shows the minimum value (Hce=0.85 Oe) at x=0.53. More importantly, not only nanoscale grain-size D contributing to small coercivity is proved, but also a D3 dependence of Hce is observed in the range of 0.53u0003C;xu0003C;0.86, which is similar to the results of Suzuki etal reported for nanocrystalline alloys. Based on the random anisotropy model of Suzuki and Herzer, the grain-size D dependence of coercivity Hce in our metal-insulator granular film system was analyzed. Analyze results indicate that strong coherent uniaxial anisotropy which dominates over the random anisotropy of magnetic grains obtained by the random anisotropy model can be responsible for the D3 dependence of the coercivity Hce. In addition, in the range of 0.42u0003C;xu0003C;0.53, Hce (as well as Heh) increases with increasing x and then the -nD dependence of Hce deviates greatly from the D3 law, which is ascribed to the decrease in intergranular exchange coupling due to the increase in SiO2 insulator layer.
机译:对于通过磁控溅射法制备的(Fe65Co35)x(SiO2)1-x颗粒沉积薄膜,在宽的金属体积分数(x)范围内已实现了优异的软磁性能和适当的单轴磁各向异性。当x从0.86减小到0.53时,易轴Hce的矫顽力明显减小,并在x = 0.53处显示最小值(Hce = 0.85 Oe)。更重要的是,不仅证明了有助于降低矫顽力的纳米级晶粒尺寸D,而且在0.53u0003C; xu0003C; 0.86的范围内观察到了Hce的D3依赖性,这与Suzuki等人针对纳米晶体合金报道的结果相似。基于Suzuki和Herzer的随机各向异性模型,分析了金属绝缘子颗粒薄膜系统中矫顽力Hce的晶粒尺寸D依赖性。分析结果表明,强相干的单轴各向异性占主导地位,D3对矫顽力Hce的依赖性是由随机各向异性模型获得的,该强相干单轴各向异性主导着磁性颗粒的随机各向异性。此外,在0.42u0003C; xu0003C; 0.53的范围内,Hce(以及Heh)随着x的增加而增加,然后Hce的-nD依赖性与D3定律大大偏离,这归因于晶间交换耦合的减少。由于SiO2绝缘层的增加。

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  • 来源
    《Journal of Applied Physics》 |2010年第7期|P.073902-073902-4|共4页
  • 作者单位

    Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, No. 92 Weijin Road, Nankai District, Tianjin 300072, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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