Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon

摘要

We present a methodology for estimating the efficiency potential for candidate impurity-band photovoltaic materials from empirical measurements. This methodology employs both Fourier transform infrared spectroscopy and low-temperature photoconductivity to calculate a “performance figure of merit” and to determine both the position and bandwidth of the impurity band. We evaluate a candidate impurity-band material, silicon hyperdoped with sulfur; we find that the figure of merit is more than one order of magnitude too low for photovoltaic devices that exceed the thermodynamic efficiency limit for single band gap materials.