Engineering intermediate-band photovoltaic material by heavily co-doping selenium and nitrogen in silicon

摘要

Among the various dimer configurations, the substitutional dimer exhibits the lowest formation energy and can form an impurity band that overlaps with the conduction band. The impurity band turns into an isolated and partially filled intermediate-band in the bandgap when the two impurity atoms are separated from a dimer to the remotest distance. The configurations with different impurity atom distances are stable in the Si material owing to their constant formation energy and can lead to a significant enhancement of the optical absorption in the infrared wavelength range. (C) 2018 The Japan Society of Applied Physics