Erratum: “Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1−xN/GaN heterostructures” [J. Appl. Phys. 113, 014505 (2013)]

Goyal Nitin; Fjeldly Tor A.

首页> 外文期刊>Journal of Applied Physics >Erratum: “Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1−xN/GaN heterostructures” [J. Appl. Phys. 113, 014505 (2013)]

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Erratum: “Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1−xN/GaN heterostructures” [J. Appl. Phys. 113, 014505 (2013)]

机译：勘误表：“应变松弛对AlxGa1-xN / GaN异质结构中裸露的表面势垒高度和二维电子气的影响” [J.应用物理113，014505（2013）]

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来源
《Journal of Applied Physics》 |2014年第24期|249901-249901|共1页
作者
Goyal Nitin; Fjeldly Tor A.;
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Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034, Norway|c|;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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1. Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in Al_xGa_(1-x)N/GaN heterostructures [J] . Nitin Goyal, Tor A. Fjeldly Journal of Applied Physics . 2013,第1期

机译：应变松弛对Al_xGa_（1-x）N / GaN异质结构中裸露的表面势垒高度和二维电子气的影响
2. Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of AlxGa1−xN/GaN heterostructures [J] . Sen Huang Hongwei Chen and Kevin J. Chen Applied Physics Letteres . 2010,第23期

机译：氟等离子体处理对AlxGa1-xN / GaN异质结构的表面电势和肖特基势垒高度的影响
3. Erratum: “Ab initio studies of electronic properties of bare GaN(0001) surface” [J. Appl. Phys. 106, 054901 (2009)] [J] . Kempisty Pawel Journal of Applied Physics . 2012,第10期

机译：勘误：“从头开始研究GaN（0001）裸露表面的电子特性” [J.应用物理106，054901（2009）]
4. Magnetotransport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures under illumination [C] . Tang Ning, Shen Bo, Han Kui, International Conference on Solid-State and Integrated-Circuit Technology . 2008

机译：在照明下Alxga1-XN / GaN异质结构中二维电子气体的磁电阻性能
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6. Erratum: “High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” J. Appl. Phys. 115, 174507 (2014) [O] . Sanjay Kumar Jana, Partha Mukhopadhyay, Saptarsi Ghosh, 2015

机译：错误：“高分辨率X射线衍射分析Alxga1-XN / Inxga1-Xn / GaN上的蓝宝石多层结构：理论，模拟和实验观察”J。苹果。物理。 115,174507（2014）

Erratum: “Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1−xN/GaN heterostructures” [J. Appl. Phys. 113, 014505 (2013)]

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