Angular distribution of polarized spontaneous emissions and its effect on light extraction behavior in InGaN-based light emitting diodes

摘要

Angular intensity distributions of differently polarized light sources in multiple quantum wells (MQWs) and their effects on extraction behavior of spontaneous emission from light emitting diode (LED) chips have been studied. Theoretical calculation based on k·p approximation, ray tracing simulation and angular electroluminescence measurement were applied in this work. It is found that the electron-hole recombination in the InGaN MQWs produces a spherical distribution of an s-polarized source and a dumbbell-shaped p-polarized source. Light rays from different polarized sources experience different extraction processes, determining the polarization degree of electro-luminescence and extraction efficiency of LEDs.