机译:横截面Zincblende GaN LED异质结构的多示意性
Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 OFS United Kingdom;
Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 OFS United Kingdom;
Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 OFS United Kingdom;
Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 OFS United Kingdom;
Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 OFS United Kingdom;
Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 OFS United Kingdom Centre for High Frequency Engineering University of Cardiff 5 The Parade Newport Road Cardiff CF24 3AA United Kingdom Kubos Semiconductors Ltd Future Business Centre King's Hedges Road Cambridge CB4 2HY United Kingdom;
Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 OFS United Kingdom;
机译:通过三维多尺寸显示的GaN / ALN量子点的载流子定位
机译:合金偏析在锌苄德甘异质结构中堆叠故障
机译:通过等离子体辅助分子束外延在轴上生长的缩放通道N极GaN / AlN异质结构上的高电子迁移率和低薄层电阻
机译:HVPE上的InGaN / GaN双异质结构LED
机译:高性能紫外线光电探测器和LED和光电探测器的单片集成在SI上生长的P-GAN / AlGaN / GaN异质结构上的LED和PhotoTopetector
机译:强激光场作用下闪锌矿InGaN-GaN量子阱的激子性质
机译:合金偏析在锌苄德甘异质结构中堆叠故障
机译:利用氮化铟镓(InGaN)/氮化镓(GaN)异质结构的负极化特性实现具有深紫外(<250nm)发射的频率倍增蓝绿激光(2年级)。