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A comparison of magnetoconductivities between type-Ⅰ and type-Ⅱ Weyl semimetals

机译:Ⅰ型和Ⅱ型Weyl半型磁导的比较

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摘要

It is well known that Weyl semimetals (WSMs) are classified into two types of type-Ⅰ and type-Ⅱ depending on whether or not they have electron and hole pockets. Also, these WSMs have peculiar transport properties such as negative longitudinal magnetoresistance and planar Hall effect because of a chiral anomaly. In this paper, however, we show that the chiral anomaly can cause positive longitudinal magnetoresistance in type-Ⅱ WSMs. Here, we investigate longitudinal and transverse magnetoconductivities of time reversal symmetry broken type-Ⅰ and type-Ⅱ WSMs using a tight-binding model. The model allows us to describe both types of type-Ⅰ and type-Ⅱ WSMs by tuning parameters, and it has two Weyl points that are separated along the k_x direction. The numerical calculations of these conductivities are performed using the Boltzmann equation including the Berry curvature. It is found that longitudinal magnetoconductivities in the x-direction can have both positive and negative values depending on the magnitude of the inclination of a Weyl cone. This is because the zeroth Landau energy-level becomes either a hole-like one or an electron-like one depending on the magnitude of the inclination of the Weyl cone in type-Ⅱ WSMs. These results imply that we can make a high MR-ratio device using type-Ⅱ WSMs by tuning the inclination of their cones if it is possible to change their energy bands by the application of electric field and so on.
机译:众所周知,Weyl Semimetals(WSM)分为两种类型的Ⅰ型和Ⅱ型,具体取决于它们是否具有电子和孔口袋。而且,这些WSM具有特殊的传输性质,例如由于手性异常,如阴性纵向磁阻和平面霍尔效应。然而,在本文中,我们表明手性异常可引起Ⅱ型WSM中的正纵向磁阻。在这里,我们调查时间反演对称性的纵向和横向的断裂magnetoconductivities型-Ⅰ和使用紧密结合模型类型ⅡWSMS。该模型允许我们通过调谐参数来描述这两种类型的类型Ⅰ和类型ⅡWSMS,它具有沿着k_x方向分开的两个外尔分。使用包括浆果曲率的Boltzmann等式进行这些导电率的数值计算。据发现,在x方向上纵向magnetoconductivities可以具有正的和负的值取决于外尔锥体的倾斜的大小。这是因为Zeroth Landau能量水平根据Ⅱ型WSMS中的Weyl Cone倾斜的幅度变为孔或电子样电。这些结果意味着,如果可以通过在应用电场等延伸,我们可以通过调节锥体的倾斜倾斜曲线来制备高MR比装置。

著录项

  • 来源
    《Journal of Applied Physics 》 |2021年第12期| 125104.1-125104.11| 共11页
  • 作者

    K. Morishima; K. Kondo;

  • 作者单位

    Research Institute for Electronic Science Hokkaido University Kita-ku Kita-20 Nishi-10 Sapporo Hokkaido Japan;

    Research Institute for Electronic Science Hokkaido University Kita-ku Kita-20 Nishi-10 Sapporo Hokkaido Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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