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机译:CF4 sub>等离子体处理的AlGaN / GaN异质结构界面中氟的积累:实验研究
Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;
aluminium compounds; gallium compounds; Hall effect; III-V semiconductors; plasma materials processing; rapid thermal annealing; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor heterojunctions; two-dimensional electron gas; vacancies (crystal); wide band gap semiconductors;
机译:Cf_4等离子体处理的Aigan / gan异质结构界面中氟的积累:实验研究
机译:CF4等离子体处理在AlGaN / GaN异质结构中引入深层缺陷的电学研究
机译:通过金属-绝缘体-半导体-异质结构电容器的C(V)表征研究氮化硅钝化层与AlGaN / AIN / GaN异质结构之间的界面
机译:表面波与氟等离子体处理的AlGan / GaN 2DEG的不可逆声电相互作用
机译:硅薄膜对AlGaN / GaN异质结构表面处理的严格研究。
机译:角分辨X射线光电子能谱研究Al2O3封端的GaN / AlGaN / GaN异质结构的表面极化
机译:通过金属-绝缘体-半导体-异质结构电容器的C(V)表征研究氮化硅钝化和AlGaN / AlN / GaN异质结构之间的界面