ZnO homojunction white light-emitting diodes

摘要

p-Type-doped ZnO films were grown on nominally undoped n-ZnO, which is deposited on p-Si:B by electrochemical deposition. The electrical properties of individually doped ZnO:Na/Mg/Sb/Ti films were determined by means of the Hall system at the room temperature. Our results showed that doped ZnO films had high mobility ranging from 11 to 638 cm~2/V s, carrier concentration ranging from 6.00 × 10~16 to 3.37 ×l0~19 cm~3, and low resistivity ranging from 1.62 × 10(-2) to 21.9 ×10~(-2) Ω cm. Electroluminescence measurements of obtained homojunctions exhibited three main broad luminescence bands peaking at 2.8, 2.5, and 1.98 eV, respectively. In addition to these broadbands, Fabry-Perot oscillations were also observed.