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首页> 外文期刊>Journal of Applied Physics >Effect of interfacial oxidation layer in spin pumping experiments on Ni_(80)Fe_(20)/SrIrO_3 heterostructures
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Effect of interfacial oxidation layer in spin pumping experiments on Ni_(80)Fe_(20)/SrIrO_3 heterostructures

机译:界面氧化层在Ni_(80)Fe_(20)/ sRIRO_3异质结构上的旋转泵送实验中的影响

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摘要

SrIrO_3 with its large spin-orbit coupling and low charge conductivity has emerged as a potential candidate for efficient spin-orbit torque magnetization control in spintronic devices. Here we report on the influence of an interfacial oxide layer on spin pumping experiments in Ni_(80)Fe_(20) (NiFe)/SrIrO_3 bilayer heterostructures. To investigate this scenario, we have carried out broadband ferromagnetic resonance (BBFMR) measurements, which indicate the presence of an interfacial antiferromagnetic oxide layer. We performed in-plane BBFMR experiments at cryogenic temperatures, which allowed us to simultaneously study dynamic spin pumping properties (Gilbert damping) and static magnetic properties (such as the effective magnetization and magnetic anisotropy). The results for NiFe/SrlrO_3 bilayer thin films were analyzed and compared to those from a NiFe/NbN/SrIrO_3 trilayer reference sample, where a spin-transparent, ultra-thin NbN layer was inserted to prevent the oxidation of NiFe. At low temperatures, we observe substantial differences in the magnetization dynamics parameters of these samples. In particular, the Gilbert damping in the NiFe/SrIrO_3 bilayer sample drastically increases below 50 K, which can be well explained by enhanced spin fluctuations at the antiferromagnetic ordering temperature of the interfacial oxide layer. Our results emphasize that this interfacial oxide layer plays an important role for the spin current transport across the NiFe/SrIrO_3 interface.
机译:SRIRO_3具有大的旋转轨道耦合和低电荷导电性,作为用于在旋转式装置中有效的自旋轨道扭矩磁化控制的潜在候选者。在这里,我们报告了界面氧化物层对Ni_(80)Fe_(20)(NiFe)/ Sriro_3双层异质结构的旋转泵送实验的影响。为了研究这种情况,我们已经进行了宽带铁磁共振(BBFMR)测量,这表明存在界面反铁磁氧化物层。我们在低温温度下进行了在线BBFR实验,这使我们可以同时研究动态自旋泵送性能(Gilbert阻尼)和静态磁性(例如有效磁化和磁各向异性)。分析NiFe / SrlRO_3双层薄膜的结果并与来自NiFE / NBN / SRIRO_3三层参考样品的结果进行比较,其中插入旋透明的超薄NBN层以防止NiFe的氧化。在低温下,我们观察这些样品的磁化动力学参数的大量差异。特别地,在NiFE / SRIRO_3双层样品中的吉尔伯特阻尼大幅增加到50 k以下,可以通过界面氧化物层的反铁磁性排序温度的增强的旋转波动来良好地解释。我们的结果强调,这种界面氧化物层对NIFE / SRIRO_3接口的旋转电流运输起着重要作用。

著录项

  • 来源
    《Journal of Applied Physics》 |2020年第8期|083903.1-083903.7|共7页
  • 作者单位

    Department of Physics Nano Functional Materials Technology Center Material Science Research Center Indian Institute of Technology Madras (IITM) Chennai 600036 India Low Temperature Physics Lab Department of Physics Indian Institute of Technology Madras (IITM) Chennai 600036 India;

    Walther-Meissner-Institut Bayerische Akademie der Wissenschaften 85748 Garching Germany Physik-Department Technische Universitat Munchen 85748 Garching Germany;

    Walther-Meissner-Institut Bayerische Akademie der Wissenschaften 85748 Garching Germany;

    Walther-Meissner-Institut Bayerische Akademie der Wissenschaften 85748 Garching Germany;

    Walther-Meissner-Institut Bayerische Akademie der Wissenschaften 85748 Garching Germany;

    Walther-Meissner-Institut Bayerische Akademie der Wissenschaften 85748 Garching Germany Physik-Department Technische Universitat Munchen 85748 Garching Germany;

    Low Temperature Physics Lab Department of Physics Indian Institute of Technology Madras (IITM) Chennai 600036 India;

    Walther-Meissner-Institut Bayerische Akademie der Wissenschaften 85748 Garching Germany Physik-Department Technische Universitat Munchen 85748 Garching Germany Munich Center for Quantum Science and Technology (MCQST) Schellingstr. 4 80799 Munchen Germany;

    Walther-Meissner-Institut Bayerische Akademie der Wissenschaften 85748 Garching Germany Physik-Department Technische Universitat Munchen 85748 Garching Germany Munich Center for Quantum Science and Technology (MCQST) Schellingstr. 4 80799 Munchen Germany;

    Department of Physics Nano Functional Materials Technology Center Material Science Research Center Indian Institute of Technology Madras (IITM) Chennai 600036 India;

    Walther-Meissner-Institut Bayerische Akademie der Wissenschaften 85748 Garching Germany Physik-Department Technische Universitat Munchen 85748 Garching Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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