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Underlayer effect on the soft magnetic, high frequency, and magnetostrictive properties of FeGa thin films

机译:Fega薄膜的软磁,高频和磁致伸缩性能的底层效应

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摘要

The soft magnetic, microstructural, and magnetostrictive properties of Fe_(81)Ga_(19) (FeGa) film sputter deposited onto 2.5-nm Ta, Cu, and Ni_(80)Fe_(20) (NiFe) underlayers were investigated. The films deposited with an underlayer showed increased in-plane uniaxial anisotropy and a decrease in in-plane coercivity. The smallest coercivity was observed in FeGa deposited with a NiFe underlayer at 15 Oe, compared to 84 Oe for films deposited directly on Si. In addition, an effective Gilbert damping coefficient (α_(eff)) as low as 0.044 was achieved for a 100-nm FeGa film with a NiFe underlayer. The coercivity and α_(eff) were shown to decrease further as a function of FeGa film thickness. The FeGa films were also able to retain or increase their saturation magnetostriction when deposited on an underlayer. This enhancement is attributable to the impact of the underlayer to promote an increased (110) film texture and smaller grain size, which is correlated to the lattice match of the underlayer of the sputtered FeGa film. Among the underlayers studied, NiFe promoted the best enhancement in the soft magnetic properties for FeGa thin films, making it an attractive material for both strain-mediated magnetoelectric and microwave device applications.
机译:研究了Fe_(81)Ga_(19)(Fega)薄膜溅射沉积在2.5-nm ta,Cu和Ni_(80)Fe_(20)(NiFe)底层上的软磁,微观结构和磁致伸缩性。沉积在底层沉积的薄膜显示出增加的面内单轴各向异性和面内矫顽力的降低。在15°OE的Fega中观察到在Fega中观察到最小的矫顽力,与直接沉积在Si上的薄膜的84个OE相比。此外,对于100nm Fega薄膜,实现了低至0.044的有效的Gilbert阻尼系数(α_(eff)),其中100nm Fega薄膜用Nife底层膜实现。显示矫顽力和α_(EFF)作为Fega膜厚度的函数进一步降低。当沉积在底层上时,费用薄膜也能够保留或增加其饱和磁致棘轮。这种增强可归因于底层的影响,促进增加(110)膜质地和较小的晶粒尺寸,这与溅射的Fega膜的底层的晶格匹配相关。在研究的底层中,NiFe促进了Fega薄膜的软磁特性的最佳增强,使其成为应变介导的磁电和微波器件应用的有吸引力的材料。

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  • 来源
    《Journal of Applied Physics》 |2020年第1期|013903.1-013903.6|共6页
  • 作者单位

    Department of Chemical and Biomolecular Engineering University of California Los Angeles California 90095 USA;

    Department of Chemical and Biomolecular Engineering University of California Los Angeles California 90095 USA;

    Department of Mechanical and Aerospace Engineering University of California Los Angeles California 90095 USA;

    Department of Electrical and Computer Engineering Northeastern University Boston Massachusetts 01225 USA;

    Department of Electrical and Computer Engineering University of California Los Angeles California 90095 USA;

    Department of Chemical and Biomolecular Engineering University of California Los Angeles California 90095 USA;

    Department of Electrical and Computer Engineering University of California Los Angeles California 90095 USA;

    Department of Mechanical and Aerospace Engineering University of California Los Angeles California 90095 USA;

    Department of Electrical and Computer Engineering Northeastern University Boston Massachusetts 01225 USA;

    Department of Chemical and Biomolecular Engineering University of California Los Angeles California 90095 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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