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First principles study of the electronic and magnetic properties of (Co,Ca) co-doped LiNbO_3

机译:(Co,Ca)共掺杂LiNbO_3的电子和磁性的第一性原理研究

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摘要

Based on the density functional theory first-principles method, we have investigated the electronic structures and magnetic properties of Co mono-doped and (Co,Ga) co-doped LiNbO3 systems. The results demonstrate that Co mono-doped LiNbO3 favors a spin-polarized state. The total magnetic moment is 2.04 mu(B), and the doped Co atom provides magnetic moments of 1.05 mu(B). It is found that the 2Co doped LiNbO3 system is ferromagnetic at room temperature with Delta E-FM of -34.6 meV. Furthermore, for the (Co,Ga) co-doped LiNbO3 system, the ferromagnetic state is more stable than the anti-ferromagnetic state with Delta E-FM of -172.4 meV. It is intriguing that the ferromagnetic stability is increased significantly. Although Ga itself has no contribution to the magnetic moments, (Co,Ga) co-doped LiNbO3 can induce spin-polarization. These results provide a new route for the potential applications of dilute magnetic semiconductors in spintronic devices by employing (Co,Ga) co-doped LiNbO3. Published under license by AIP Publishing.
机译:基于密度泛函理论的第一性原理方法,我们研究了Co单掺杂和(Co,Ga)共掺杂LiNbO3系统的电子结构和磁性能。结果表明,Co单掺杂的LiNbO3具有自旋极化态。总磁矩为2.04 mu(B),掺杂的Co原子提供的磁矩为1.05 mu(B)。发现掺有2Co的LiNbO3系统在室温下是铁磁性的,ΔE-FM为-34.6 meV。此外,对于(Co,Ga)共掺杂的LiNbO3系统,铁磁状态比反铁磁状态更稳定,Delta E-FM为-172.4 meV。令人感兴趣的是,铁磁稳定性显着提高。尽管Ga本身对磁矩没有贡献,但(Co,Ga)共掺杂的LiNbO3可以诱导自旋极化。这些结果为通过使用(Co,Ga)共掺杂的LiNbO3在自旋电子器件中潜在应用稀磁半导体提供了一条新途径。由AIP Publishing授权发布。

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  • 来源
    《Journal of Applied Physics》 |2019年第7期|073901.1-073901.8|共8页
  • 作者单位

    Henan Polytech Univ, Sch Mat Sci & Engn, Cultivating Base Key Lab Environm Friendly Inorga, Jiaozuo 454000, Peoples R China;

    Henan Polytech Univ, Sch Mat Sci & Engn, Cultivating Base Key Lab Environm Friendly Inorga, Jiaozuo 454000, Peoples R China;

    Henan Polytech Univ, Sch Phys & Elect Informat Engn, Jiaozuo 454000, Peoples R China;

    Henan Polytech Univ, Sch Mat Sci & Engn, Cultivating Base Key Lab Environm Friendly Inorga, Jiaozuo 454000, Peoples R China;

    Henan Polytech Univ, Sch Mat Sci & Engn, Cultivating Base Key Lab Environm Friendly Inorga, Jiaozuo 454000, Peoples R China;

    Henan Polytech Univ, Sch Phys & Elect Informat Engn, Jiaozuo 454000, Peoples R China;

    Dalian Jiaotong Univ, Sch Mat Sci & Engn, Liaoning Key Mat Lab Railway, Dalian 116028, Liaoning, Peoples R China;

    Henan Polytech Univ, Sch Mat Sci & Engn, Cultivating Base Key Lab Environm Friendly Inorga, Jiaozuo 454000, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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