Wide-wavelength-range control of photoluminescence polarization in closely stacked InAs/GaAs quantum dots

摘要

We developed a method of growing closely stacked InAs/GaAs quantum dots (QDs) to control the photoluminescence (PL) polarization characteristics in a wide wavelength range. The emission wavelength of the closely stacked QDs redshifted with decreasing substrate temperature during stacking growth, while the PL polarization characteristic was controlled by the GaAs spacer layer thickness and the number of QD layers. A unified rule for the optimum GaAs spacer layer thickness that both enhances the transverse magnetic (TM)-polarized component and achieves a high PL intensity for all growth temperatures was revealed. 30-layer stacked QDs with the optimum spacer layer thickness grown at substrate temperatures from 430 to 480 degrees C exhibited TM-enhanced polarization characteristics in the 1.15-1.3m band. Moreover, we studied the one-dimensional electronic states in the closely stacked QDs with the optimized GaAs spacer layer thickness by time-resolved PL.%234304.1-234304.8