Photo-induced enhancement of the dark conductivity in nanocrystalline germanium/amorphous silicon composite thin films

摘要

A light-induced increase in the dark conductivity is observed in composite thin films consisting of hydrogenated amorphous silicon (a-Si:H) containing nanocrystalline germanium (nc-Ge) inclusions, synthesized by co-deposition in a dual-chamber plasma enhanced chemical vapor deposition system. Unlike the Staebler-Wronski effect or persistent photoconductivity observed in amorphous semiconductors, this photo-induced excess conductivity is observed even in composite nc-Ge/a-Si:H films with a minimal photosensitivity. The decay of the excess conductivity follows a single-exponential time dependence, with a temperature independent time constant. We propose that spatial separation of photo-excited charge carriers by the compositional morphology present in the film, with tunneling of photo-excited holes into the germanium nanocrystalline inclusions, is involved in the creation and removal of this effect. Published by AIP Publishing.