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首页> 外文期刊>Journal of Applied Physics >Surface patterning of monocrystalline silicon induced by spot laser melting
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Surface patterning of monocrystalline silicon induced by spot laser melting

机译:点激光熔化引起的单晶硅表面图案

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摘要

Spot laser melting of monocrystalline silicon leads to characteristic surface structures that are defined by a peak and a quasi-periodic ripple structure. The structures are created by a 50-100 mu s pulsed infrared fiber laser and are approximately 30-100 mu m in size. We present an analytical model explaining the creation of the peak by the density anomaly of silicon. Additionally, we show that the quasi-periodic ripple structure stems from a frozen capillary wave, which allows us to determine the resolidification velocity from the ripple radii. For a structure of molten radius R-melt = 41.5 mu m, we determine a resolidification velocity v(re) = (56.6 +/- 9.2) cm/s. A numerical model for the same structure yields v(re) = 49.2 cm/s, which agrees with the value determined from the ripple pattern. The capillary wave is excited in the melt pool due to thermocapillary convection. Published by AIP Publishing.
机译:单晶硅的点状激光熔化会导致特征性的表面结构,该结构由峰和准周期的波纹结构定义。这些结构是由50-100μs的脉冲红外光纤激光器产生的,尺寸约为30-100μm。我们提供了一个分析模型,解释了由硅的密度异常造成的峰的创建。此外,我们表明准周期波纹结构源于冻结的毛细波,这使我们能够从波纹半径确定再凝固速度。对于熔融半径R-melt = 41.5μm的结构,我们确定了凝固速度v(re)=(56.6 +/- 9.2)cm / s。相同结构的数值模型得出v(re)= 49.2 cm / s,与从纹波图确定的值一致。由于热毛细管对流,毛细波在熔池中被激发。由AIP Publishing发布。

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