Enhanced ordinary magnetoresistance in Co/Si systems

摘要

The enhancement of the ordinary magnetoresistance (OMR) in Si has been attempted by constructing two type of Co/Si systems; one is the sputter-deposited current perpendicular to plane-type Co/Si multilayers and the other is the sputtered-Co/anodized-porous-Si system. The Co/Si multilayers show the sharp OMR at a low field and the negative granular-type giant magnetoresistance at higher fields. At 50 K, however, only the OMR appears with the ratio of about 3.0% for an in-plane field of 10 kOe. In the Co/anodized-Si system, a very large OMR of about 60% is observed at 50 K for perpendicular field of 10 kOe.