Ordinary and extraordinary Coulomb blockade magnetoresistance in a (Ga, Mn)As single electron transistor

摘要

In the conventional Ohmic regime, magnetoresistance effects comprise the ordinary responses to the external magnetic field and extraordinary responses to the internal magnetization. Here we study magnetoresistance effects in the Coulomb blockade regime using a ferromagnetic (Ga, Mn)As single electron transistor. We report measurements of the magneto-Coulomb blockade effect due to the direct coupling of high external magnetic fields and the Coulomb blockade anisotropic magnetoresistance associated with magnetization rotations in the ferromagnet. The latter, extraordinary magnetoresistance effect is characterized by low-field hysteretic magnetoresistance which can exceed three orders of magnitude. The sign and size of this magnetoresistance signal is controlled by the gate voltage, and the data are interpreted in terms of anisotropic electrochemical shifts induced by magnetization reorientations. Non-volatile transistor-like applications of the Coulomb blockade anisotropic magnetoresistance are briefly discussed.