Improved contact resistance and linearity in optoelectronic devices with an intermediate quaternary layer

摘要

The importance of the heterojunction between the contact and cladding layers in the contact resistance of optoelectronic devices is investigated. The incorporation of a quaternary layer, intermediate in composition, between these layers is shown to provide specific contact resistances at least 60% lower with some R_(c) values <10~(-7) Ω cm~(2) and high-speed tandem modulators with an improved linearity and reduced series resistance. The lowering of the potential barrier for hole transport is most likely responsible for these observations. The thermal stability is quite good.