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首页> 外文期刊>Journal of Applied Physics >Fluorescence quenching and excitation transfer between semiconducting and metallic organic layers
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Fluorescence quenching and excitation transfer between semiconducting and metallic organic layers

机译:半导体和金属有机层之间的荧光猝灭和激发转移

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Here we present a simple approach to study the interaction of singlet excitons with polarons in conjugated polymers in organic electronic devices. Interlayer quenching constants K-IL of 1.5 M-1 between a fluorescent molecule and a doped polymer in a layered sample demonstrates the importance of understanding the quenching of excited states in polymeric devices. A combination of Forster resonance energy transfer and quenching of photoluminescence between a fluorescent molecule and a conjugated polymer in its semiconducting and metallic states were studied. The polymer is a chiral 3-substituted polythiophene (POWT) and the fluorescent molecule is fluorescein bound to dextran (D-FITC). Bilayer samples with fluorescein on top of the POWT were fabricated and studied with absorption spectroscopy, fluorescence microscopy, and electrochemical doping methods. When POWT is electrochemically dedoped it is possible to enhance the photoluminescence in the polymer layer by excitation transfer from the fluorescein layer. Our results demonstrate that PL from the polythiophene disappears rapidly as soon as the layer is doped. As the doping of polymer layer increases the fluorescence from the fluorescein on top of the polymer decreases, due to excitation quenching. Models for excitation transfer and excitation quenching in POWT/FITC bilayer devices have been developed. This model predicts a linear relationship between the PL from the two molecules, in agreement with our experimental findings. These results are relevant for the development of electroluminescent devices or solar cells based on conjugated polymers. (C) 2004 American Institute of Physics.
机译:在这里,我们提出一种简单的方法来研究有机电子器件中共轭聚合物中单重态激子与极化子的相互作用。层状样品中荧光分子与掺杂的聚合物之间的层间猝灭常数K-IL为1.5 M-1,这表明了理解聚合物器件中激发态猝灭的重要性。研究了Forster共振能量转移和荧光分子与共轭聚合物在半导体状态和金属状态下的光致发光猝灭的结合。该聚合物是手性3-取代的聚噻吩(POWT),荧光分子是与葡聚糖结合的荧光素(D-FITC)。制备了在POWT顶部具有荧光素的双层样品,并通过吸收光谱,荧光显微镜和电化学掺杂方法进行了研究。当POWT被电化学去掺杂时,可以通过来自荧光素层的激发转移来增强聚合物层中的光致发光。我们的结果表明,掺杂该层后,聚噻吩的PL迅速消失。随着聚合物层的掺杂增加,由于激发猝灭,来自聚合物顶部的荧光素的荧光降低。已经开发出POWT / FITC双层器件中的激发转移和激发猝灭模型。该模型预测了两个分子的PL之间的线性关系,与我们的实验结果一致。这些结果与基于共轭聚合物的电致发光器件或太阳能电池的开发有关。 (C)2004美国物理研究所。

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