Electronic spatial distribution of In_(0.53)Ga_(0.47)As/AlAs_(0.56)Sb_(0.44) quantum-cascade lasers

摘要

We have investigated the band-to-band photoluminescence of In_(0.53)Ga_(0.47)As/AlAs_(0.56)Sb_(0.44) quantum-cascade devices operating at λ～4.3 μm, based either on normally grown or nominally As-terminated interfaces. This technique allowed us to probe the spatial distribution of conduction electrons as a function of the applied voltage and to correlate the quantum design of devices with their thermal performance.