Mo_2C nanowires and nanoribbons on Si by two-step vapor-phase growth

摘要

Transition-metal carbides in bulk form have historically been of technological interest primarily due to their excellent mechanical and refractory properties. As electronic materials these ceramic compounds are also particularly intriguing in that their electrical resistivity is relatively low compared to other ceramics and shows metallic temperature-dependent behavior. Some compositions also have superconducting transitions temperatures above 10° K. However, the synthesis of such materials in the form of one-dimensional nanostructures, which may be of interest for various nanoelectronic applications, is relatively difficult due to their refractory nature (T_(melt) ≥2000℃). Here we report the synthesis of well-defined Mo_2C nanowires and ribbons using a two-step approach in which we catalytically grow metal oxide nanostructures followed by in situ carburization. The growth mechanisms, microstructure, and initial electrical property measurements are discussed.