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首页> 外文期刊>Journal of Applied Physics >Magnetostriction effect of amorphous CoFeB thin films and application in spin-dependent tunnel junctions
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Magnetostriction effect of amorphous CoFeB thin films and application in spin-dependent tunnel junctions

机译:非晶态CoFeB薄膜的磁致伸缩效应及其在自旋相关隧道结中的应用

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摘要

CoFeB thin films and magnetic tunnel junctions using them are studied for magnetostriction effect. The single-layer films were sputter deposited with excellent soft magnetic properties including a high saturation magnetization of 1.5 T, a near-zero hard axis coercivity, a low easy axis coercivity of 2.0 Oe, and an induced magnetic anisotropy field of 32 Oe. The saturation magnetostriction constant is measured to be 31 ppm. Magnetic tunnel junctions (MTJs) were fabricated and tested for potential strain gauge applications. The gauge factor for the magnetostrictive MTJs, a measure of strain sensitivity, is many times of the best piezoresistive devices.
机译:研究了CoFeB薄膜和使用它们的磁性隧道结的磁致伸缩效应。溅射沉积的单层薄膜具有出色的软磁性能,包括1.5 T的高饱和磁化强度,接近零的硬轴矫顽力,2.0 Oe的低易轴矫顽力以及32 Oe的感应磁各向异性场。饱和磁致伸缩常数经测量为31 ppm。磁性隧道结(MTJ)的制造和测试适用于潜在的应变仪应用。磁致伸缩MTJ的应变系数是衡量应变灵敏度的指标,是最佳压阻器件的许多倍。

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