Highly oriented Ni(Pd)SiGe formation at 400℃

摘要

A germanosilicide technology employing Ni_(0.95)Pd_(0.05) alloy to improve the germanosilicide film texture strucutre on relaxed Si_(1-x)Ge_x substrate has been developed. Highly oriented (Ni_(0.95)Pd_(0.05))_y(Si_(1-x)Ge_x)_(1-y) films where x=0.2, 0.25, 0.3, and y ≈ 0.5 are obtained at 400℃ annealing with (200) as the preferred orientation, as was revealed by cross-sectional transmission electron microscopy and x-ray diffraction results. The formation of the highly oriented (Ni_(0.95)Pd_(0.05))_y(Si_(1-x)Ge_x)_(1-y) film can be explained by interface and surface energies minimization due to the addition of Pd.