Frequency band-gap measurement of two-dimensional air/silicon phononic crystals using layered slanted finger interdigital transducers

摘要

In this paper, we investigate the frequency band-gap features of micromachined air/silicon phononic band structures using layered slanted ringer interdigital transducers (SFIT). In order to achieve the applications of phononic crystals on the microelectromechanical system related components, the frequency band-gap widths of surface waves are studied both theoretically and experimentally in micrometer scale phononic crystals. For further integration with the complementary metal-oxide semiconductor processing techniques, silicon is chosen as the base material of the two-dimensional phononic crystals in this study. To cover the frequency band-gap width of the phononic crystal, the wideband SFIT- and the SFIT/ZnO/Si-layered structures in the measurement are analyzed and discussed. For layered structures, the dispersive relation is calculated by the effective permittivity approach, and the frequency response of the layered SFIT is then simulated by the coupling-of-modes model. The frequency band-gap width and the frequency range of two-dimensional air/silicon phononic crystals in micrometer scale are measured, and the result agrees well with the theoretical evaluation.