Effect of substrate growth temperatures on H diffusion in hydrogenated Si/Si homoepitaxial structures grown by molecular beam epitaxy

摘要

We have investigated hydrogen diffusion in hydrogenated < 100 > Si/Si homoepitaxial structures, which were grown by molecular beam epitaxy at various temperatures. The substrate growth temperature can significantly affect the H diffusion behavior, with higher growth temperatures resulting in deeper H diffusion. For the Si/Si structure grown at the highest temperature of 800℃, H trapping occurs at the epitaxial Si/Si substrate interface, which results in the formation of (100) oriented microcracks at the interface. The mechanism of H trapping and the potential application of these findings for the development of a method of transferring ultrathin Si layers are discussed.