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CO_2 laser induced temperature profiles in n-GaAs: An analytical model probed with the Seebeck effect

机译:nGaAs中CO_2激光诱导的温度曲线:用塞贝克效应探测的分析模型

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摘要

An analytic model describing the distribution of the electron temperature created by absorption of an optical beam with a cylindrical symmetry in a layered structure was developed. Main attention was paid to the contribution of the lattice heating in the stationary and nonstationary regimes. It was shown that both the spatial distribution of the incident stationary beam and the temporal distribution of the incident pulses can be retrieved from the spatial and temporal electron temperature dependences near the illuminated surface. Electron temperature distributions can be measured using the thermoelectric effect. Experimental results of the spatial and temporal measurements of the thermoelectric voltage were compared with the theoretical calculations and a satisfactory agreement between experimental and theoretical results was found near the incident beam center for the quasistationary regime. The experimentally derived Seebeck detector's responsivity equals 17.5 μV/Wcm~(-2).
机译:建立了解析模型,该模型描述了在层状结构中通过吸收具有圆柱对称性的光束而产生的电子温度分布。主要关注了晶格加热在固定和非固定状态下的贡献。结果表明,入射静止光束的空间分布和入射脉冲的时间分布都可以从照射表面附近的空间和时间电子温度依赖性中获得。可以使用热电效应来测量电子温度分布。将热电电压的时空测量的实验结果与理论计算进行了比较,在准平稳状态下,在入射光束中心附近,实验和理论结果之间取得了令人满意的一致性。实验得出的塞贝克探测器的响应度等于17.5μV/ Wcm〜(-2)。

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