Formation of Si nanocrystallites observed by in situ transmission electron microscopy and their effect on the enhancement of Er photoluminescence in Er-doped SiO_2

摘要

The formation of Si nanocrystallites (nc-Si) in erbium (Er)-dispersed SiO_x (x ≤ 2) films was investigated by in situ annealing while performing transmission electron microscopy measurements. The correlation between the formation of nc-Si and Er ion emissions was also comprehensively investigated by photoluminescence and electron spin resonance measurements. The results showed that the formation of nano-Si region with the suitable size is important for enhancement of Er ion emission.