Kinetics, stoichiometry, morphology, and current drive capabilities of Ir-based silicides

摘要

A detailed study of the formation of indium silicide obtained by ultrahigh vacuum annealing and atmospheric rapid thermal processing is proposed using x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and electrical characterizations. Using XPS analysis, the stoichiometry of each silicide phase (IrSi, IrSi_(1.6)) is identified. A model based on the variation of the measured intensity of the Ir 4f spectra is used to obtain the kinetic coefficients of reaction of Ir silicidation (E_A = 2.48 eV, D_0=9 cm~2/s). TEM cross sections indicate that the roughness of the silicide/silicon interface increases with temperature. Lastly, electrical characteristics are used to identify the optimum annealing temperature to obtain an iridium silicide contact with the lowest Schottky barrier height to holes.