Responsivity of ZnTe-GaAs heterostructures formed by infrared nanosecond laser deposition

摘要

With nanosecond laser pulses at 1064 run, ZnTe was ablated and deposited onto n-GaAs. The intrinsic and extrinsic room temperature responsivities of the heteropairing was investigated with lock-in technique employing various optical chopping frequencies. The work brings to light two peculiar features: The photocurrent of the structure possesses a frequency independent (isosbestic) point and the dominating photocurrent, i.e., defect or bulk related, crossing the sample can be sensitively altered via the sign of the bias. The reported features here, which cannot be achieved with GaAs itself, might open useful technological calibrating applications for light detectors.