Low-voltage organic thin-film transistors with large transconductance

摘要

We have developed an organic thin-film transistor (TFT) technology that aims at providing a good balance of static and dynamic performance parameters. An inverted staggered (bottom-gate, top-contact) device structure with patterned metal gates, a room-temperature-deposited gate dielectric providing a capacitance of 0.7 μF/cm~2, and vacuum-deposited pentacene as the semiconductor were employed. The TFTs have a channel length of 10 μm, a carrier mobility of 0.4 cm~2/V s, an on/off current ratio of 10~7, a subthreshold swing of 100 mV/decade, and a transconductance per channel width of 40μS/mm. Ring oscillators operate with supply voltages as low as 2 V and with signal propagation delays as low as 200 μs per stage.