Band structures of AlAs, GaP, and SiGe alloys: A 30 k×p model

摘要

The band structure of indirect-band gap semiconductors (AlAs, GaP) as well as indirect-band gap alloys semiconductors (GeSi) is described theoretically by using a 30 × 30 k × p model including the d far-level contribution. For all materials investigated, the resulting electronic band structure parameters are in good agreement with experimental values. The method also provides a good description of the second conduction band which is useful for transport modeling. Finally, our results show that Luttinger parameters, the k valence band parameter, and the effective masses in the X and L valleys are in good agreement with available experimental data.