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首页> 外文期刊>Journal of Applied Physics >Antiferromagnetic interlayer coupling through a thin MgO layer in γ-Fe_2O_3/MgO/Fe(001) multilayers
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Antiferromagnetic interlayer coupling through a thin MgO layer in γ-Fe_2O_3/MgO/Fe(001) multilayers

机译:通过γ-Fe_2O_3/ MgO / Fe(001)多层中的薄MgO层进行反铁磁层间耦合

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摘要

We investigated the magnetization process of epitaxial MgO(001)/γ-Fe_2O_3/MgO/Fe(001) multilayers. When the thickness of a MgO spacer layer was less than 1.0 nm, an antiferromagnetic interlayer exchange coupling (IEC) between Fe(001) and γ-Fe_2O_3(001) layers appeared. Unlike the oscillatory IEC in metallic systems, the sign of the observed IEC is only antiferromagnetic. The strongest coupling constant was found to be around -1.8 erg/cm~2 at the MgO thickness of 0.5 nm. This antiferromagnetic coupling via the insulating MgO layer is possibly understood within the framework of spin polarized tunneling models.
机译:我们研究了外延MgO(001)/γ-Fe_2O_3/ MgO / Fe(001)多层膜的磁化过程。当MgO间隔层的厚度小于1.0nm时,在Fe(001)和γ-Fe_2O_3(001)层之间出现反铁磁层间交换耦合(IEC)。与金属系统中的振荡IEC不同,所观察到的IEC的符号只是反铁磁的。 MgO厚度为0.5 nm时,最强的耦合常数约为-1.8 erg / cm〜2。在自旋极化隧穿模型的框架内,可能会理解通过绝缘MgO层的这种反铁磁耦合。

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