Low-temperature magnetization with epitaxial hexagonal HoMnO_3 films and single crystal has been investigated. The magnetization data of films show three distinctive transitions which are compared with those of a single crystal. In order to test the ferroelectric behavior of HoMnO_3 thin films, epitaxial capacitor trilayers with Pt electrodes have been grown. For the well-prepared trilayer, a ferroelectric switching at room temperature has been demonstrated in spite of a certain degree of leakage with a film resistivity of about 10~7 Ω cm.
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