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Effect of crystallographic orientation of Co_2MnGe Heusler-alloy film on its surface roughness and ordered structure

机译:Co_2MnGe Heusler合金膜的晶体取向对其表面粗糙度和有序结构的影响

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摘要

The effects of direction and degree of preferred orientation of Co_2MnGe film on the surface roughness and the ordered structure were investigated by utilizing various buffer layers and underlayers. Degrees of preferred orientation of Co_2MnGe film were estimated by measuring the full width at half maximum (FWHM) of the x-ray diffraction rocking curve for Co_2MnGe(400) or Co_2MnGe(220) reflections. A high B2 ordered structure and a high saturation magnetization, which is almost the same value as in the case of epitaxial Co_2MnGe films, were obtained regardless of the direction and degree of preferred orientation, except in the case of the Co_2MnGe films without both buffer layers and underlayers. Also, surface roughness decreased when decreasing the FWHM of x-ray diffraction rocking curve, and the small surface roughness (that is almost the same value as in the case of epitaxial Co_2MnGe films) was obtained for Co_2MnGe films with the high degree of preferred orientation. A smaller surface roughness was obtained in the case of Co_2MnGe films with (110) preferred orientation compared with the Co_2MnGe(100) case. The tendencies of change of the surface roughness were explained from the viewpoint of surface energy.
机译:利用各种缓冲层和底层研究了Co_2MnGe薄膜的取向和取向度对表面粗糙度和有序结构的影响。通过测量Co_2MnGe(400)或Co_2MnGe(220)反射的X射线衍射摇摆曲线的半峰全宽(FWHM),可以估算Co_2MnGe薄膜的首选取向度。不管优选取向的方向和程度如何,都获得了高B2有序结构和高饱和磁化强度,其值与外延Co_2MnGe膜的情况几乎相同,除了没有两个缓冲层的Co_2MnGe膜的情况和底层。而且,当降低X射线衍射摇摆曲线的FWHM时,表面粗糙度降低,并且对于具有优选取向度的Co_2MnGe膜而言,获得了小的表面粗糙度(与外延Co_2MnGe膜的情况几乎相同的值)。 。与(Co_2MnGe(100))相比,具有(110)较好取向的Co_2MnGe膜的表面粗糙度较小。从表面能的角度解释了表面粗糙度的变化趋势。

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