The work reports the effect of a tensile stress on the magnetic domain of FeCoSiB amorphous films. The domain structures of the unstressed and stressed FeCoSiB amorphous films with different tensile strains have been studied by magnetic force microscopy (MFM). With the increase of the tensile stress in the samples, it has been observed that the domain structures transform from irregular domains into parallel strip domains, and magnetic contrasts decrease. The MFM image disappears when the tensile stress is strong enough. A model has been presented to explain the evolution of the domain structures under the tensile stress. The effects of the stress on the domain of the films have been discussed.
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State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;
