Photoluminescence and self-interference in germanium-doped silica films

摘要

Germanium-doped silica films were prepared by magnetron cosputtering and postannealing. The photoluminescence properties and their dependence on the Ge contents and annealing temperature were investigated. Our experiments indicate that the observed light emission originates from the neutral oxygen vacancy defects. The substructures in the luminescence bands of the films were found to result from multiple-beam interferences of the emission in the optical cavity formed by the transparent films.