Stark effect and oscillator strength in a Si_(1-x)Ge_x/Si quantum disk

摘要

In the framework of the effective mass approximation, we develop a method to study the quantum-confined Stark effect in a Si_(1-x)Ge_x/Si quantum disk. The hole energy levels are calculated presence of a vertically applied electric field adiabatic approximation using an exact diagonalization technique. The effects of strain, finite offset, and the difference between effective masses of holes in different materials are taken into account. The oscillator strength of the Si_(1-x)Ge_x/Si quantum disk system under a vertically applied electric field is also studied. Our calculated results are useful for the application of Si_(1-x)Ge_x/Si quantum disks in photoelectric devices.