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首页> 外文期刊>Journal of Applied Physics >Studies on the room temperature growth of nanoanatase phase TiO_2 thin films by pulsed dc magnetron with oxygen as sputter gas
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Studies on the room temperature growth of nanoanatase phase TiO_2 thin films by pulsed dc magnetron with oxygen as sputter gas

机译:氧气作为溅射气体的脉冲直流磁控管在室温下生长纳米锐钛矿相TiO_2薄膜的研究

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摘要

The anatase phase titanium dioxide (TiO_2) thin films were deposited at room temperature by pulsed dc magnetron sputtering using pure oxygen as sputter gas. The structural, optical, electrical, and electrochromic properties of the films have been studied as a function of oxygen pressure in the chamber. The x-ray diffraction results indicate that the films grown above 4.5 X 10~(-2) mbar are nanocrystalline (grain size of 28-43 nm) with anatase phase. The films deposited at the chamber pressure of 7.2 X 10~(-2) mbar are found to be highly crystalline with a direct optical band gap of 3.40 eV, refractive index of 2.54 (at λ=400 nm), and work function of 4.77 eV (determined by the Kelvin probe measurements). From the optical emission spectra of the plasma and transport of ions in matter calculations, we find that the crystallization of TiO_2 at room temperature is due to the impingement of electrons and ions on the growing films. Particularly, the negative oxygen ions reflected from the target by "negative ion effects" and the enhanced density of TiO, TiO~+, TiO_2~+, and O~(2+) particles in the plasma are found to improve the crystallization even at a relatively low temperature. From an application point of view, the film grown at 7.2 X 10~(-2) mbar was studied for its electrochromic properties by protonic intercalation. It showed good electrochromic behavior with an optical modulation of ~45%, coloration efficiency of 14.7 cm~2 C~(-1), and switching time (t_c) of 50 s for a 2 X 2 cm~2 device at λ= 633 nm.
机译:在室温下,通过使用纯氧气作为溅射气体的脉冲直流磁控溅射,沉积了锐钛矿相二氧化钛(TiO_2)薄膜。已经研究了膜的结构,光学,电和电致变色性质与室中氧气压力的关系。 X射线衍射结果表明,在4.5 X 10〜(-2)mbar以上生长的薄膜是具有锐钛矿相的纳米晶体(晶粒尺寸为28-43 nm)。发现在7.2 X 10〜(-2)mbar的腔压力下沉积的膜是高度结晶的,直接光学带隙为3.40 eV,折射率为2.54(在λ= 400 nm时),功函为4.77 eV(由开尔文探针测量确定)。从等离子体的光发射光谱和物质计算中的离子迁移,我们发现室温下TiO_2的结晶是由于电子和离子撞击在生长的薄膜上。尤其是,发现通过“负离子效应”从靶反射的负氧离子以及等离子体中TiO,TiO〜+,TiO_2〜+和O〜(2+)粒子的增强密度可改善结晶度。相对较低的温度。从应用的角度出发,通过质子插层研究了在7.2 X 10〜(-2)mbar下生长的薄膜的电致变色性能。对于2 X 2 cm〜2的器件,在λ= 633时,它表现出良好的电致变色行为,光学调制为〜45%,着色效率为14.7 cm〜2 C〜(-1),切换时间(t_c)为50 s。纳米

著录项

  • 来源
    《Journal of Applied Physics》 |2007年第6期|p.064318.1-064318.7|共7页
  • 作者单位

    Semiconductor Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;计量学;
  • 关键词

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