Measurement And Calculation Of Charge Deposition In A Silicon Diode Irradiated By 30 Mev Protons

摘要

The aim of this work is to validate the results of the MC-RED nuclear physics code used to determine the deposited energy in a silicon volume taking into account the probabilistic approach of the physical phenomenon. A silicon diode has been irradiated by a quasimonoenergetic beam at the CYCLONE facility at Catholic University of Louvain. Experimental results were compared with the ones obtained by Monte Carlo simulations. When all the possible contributions (direct ionizations and nuclear reactions) of protons to the total deposited charge are taken into account, experiments and simulations are shown to be in good agreement in the field of interest for Static Random Acces Memory (SRAM) soft error rate evaluation.