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首页> 外文期刊>Journal of Applied Physics >Planar Hall Bead Array Counter Microchip With Nife/irmn Bilayers
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Planar Hall Bead Array Counter Microchip With Nife/irmn Bilayers

机译:具有Nife / irmn双层的平面霍尔珠阵列计数器微芯片

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The planar Hall effect (PHE) magnetic bead array countermicrochip integrating 24 of single sensors based on a simple NiFe/IrMn bilayer structure with a patterned size of 3 × 3 μm~2 has been fabricated and characterized. Single PHE sensors exhibit a sensitivity of about 2.5 mΩ/Oe. It was well applied for single Dynabeads~R M-280 detection, where one bead can induce a signal change, ΔV~2.2 mV, under the applied magnetic field of 20 Oe and a sensing current of 2 mA. This type of microchip is promising for quickly detecting and identifying multiple biological agents in the environment.
机译:平面霍尔效应(PHE)磁珠阵列反微芯片集成了24个基于简单NiFe / IrMn双层结构的单个传感器,其图案化尺寸为3×3μm〜2。单个PHE传感器的灵敏度约为2.5mΩ/ Oe。适用于单个Dynabeads〜R M-280检测,在20 Oe的磁场和2 mA的感应电流下,一只磁珠可以引起信号变化ΔV〜2.2 mV。这种类型的微芯片有望用于快速检测和识别环境中的多种生物制剂。

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