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首页> 外文期刊>Journal of Applied Physics >Thickness of the pinned layer as a controlling factor in domain wall formation during training in IrMn-based spin valves
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Thickness of the pinned layer as a controlling factor in domain wall formation during training in IrMn-based spin valves

机译:在IrMn基自旋阀的训练过程中,固定层的厚度是控制畴壁形成的控制因素

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摘要

Studies of CoFe-based spin valves with antiferromagnetic IrMn layers as thin as 1.6 nm have demonstrated that a domain wall parallel to the surface develops in the pinned layer after training at the magnetoresistance (MR) maximum. To investigate the effec
机译:对具有1.6nm薄的反铁磁性IrMn层的基于CoFe的自旋阀的研究表明,在磁阻(MR)最大值训练后,在固定层中会形成与表面平行的畴壁。调查效果

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