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Strongly enhanced current-carrying performance in MgB_2 tape conductors by C_(60) doping

机译:通过C_(60)掺杂大大增强了MgB_2带状导体的载流性能

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摘要

By utilizing C_(60) as a viable alternative dopant, we demonstrate a simple and industrially scalable route that yields a 10~ 15-fold improvement in the in-high-field current densities of MgB_2 tape conductors. For example, a J_c value higher than 4 × 10~4 A/cm_2 (4.2 K, 10 T), which exceeds that for NbTi superconductor, can be realized on the C_(60) doped MgB_2 tapes. It is worth noting that this value is even higher than that fabricated using strict high energy ball milling technique under Ar atmosphere. At 20 K, H_(irr) was ~10 T for C_(60) doped MgB_2 tapes. A large amount of nanometer-sized precipitates and grain boundaries were found in MgB_2 matrix. The special physical and chemical characteristics of C_(60), in addition to its C containing intrinsic essence, are a key point in enhancing the superconducting performance of MgB_2 tapes
机译:通过使用C_(60)作为可行的替代掺杂剂,我们证明了一种简单且可工业升级的路线,该路线可将MgB_2带状导体的高场内电流密度提高10到15倍。例如,可以在掺杂C_(60)的MgB_2胶带上实现高于4×10〜4 A / cm_2(4.2 K,10 T)的J_c值,该值超过NbTi超导体的J_c值。值得注意的是,该值甚至高于在Ar气氛下使用严格的高能球磨技术制造的值。对于C_(60)掺杂的MgB_2磁带,在20 K下H_(irr)约为10T。在MgB_2基体中发现了大量的纳米级析出物和晶界。 C_(60)的特殊物理和化学特性,以及其含C的固有本质,是增强MgB_2带的超导性能的关键点

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