Energy band gap, intrinsic carrier concentration, and Fermi level of CdTe bulk crystal between 304 and 1067 K

Ching-Hua Sir

首页> 外文期刊>Journal of Applied Physics >Energy band gap, intrinsic carrier concentration, and Fermi level of CdTe bulk crystal between 304 and 1067 K

【24h】

Energy band gap, intrinsic carrier concentration, and Fermi level of CdTe bulk crystal between 304 and 1067 K

机译：CdTe块状晶体在304和1067 K之间的能带隙，本征载流子浓度和费米能级

获取原文

获取原文并翻译 | 示例

获取外文期刊封面封底 >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Optical transmission measurements were performed on CdTe bulk single crystals. It was found that when sliced and polished CdTe wafers were used, a white film started to develop on the sample surface and the wafer became opaque when it was heated above 530

机译：在CdTe块状单晶上进行了透光率测量。发现使用切片和抛光的CdTe晶片时，样品表面开始形成白色薄膜，并且当晶片加热到530以上时晶片变得不透明。

著录项

来源
《Journal of Applied Physics》 |2008年第8期|1193-1198|共6页
作者
Ching-Hua Sir;
展开▼
作者单位

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Effect of annealing on the carrier concentrations and the deep levels in CdTe single crystals [J] . H. I. Lee, Y. D. Woo Journal of Materials Science Letters . 1999,第9期

机译：退火对CdTe单晶中载流子浓度和深能级的影响
2. The optical energy gap dependence on both carrier concentration and intrinsic energy gap in n-type semiconductors [J] . Omar MS, Gorges FY Materials science in semiconductor processing . 2006,第1a3期

机译：n型半导体中光能隙对载流子浓度和本征能隙的依赖性
3. Current, carrier concentration, Fermi energy, and related properties of binary compound polar semiconductors with nonparabolic energy bands [J] . Journal of Applied Physics . 1986,第4期

机译：具有非抛物能带的二元化合物极性半导体的电流，载流子浓度，费米能及相关特性
4. Local charge neutgrality condition, Fermi level, and carrier compensation of CdTe polycrystalline thin film in CdS/CdTe solar cells [C] . Chin Ken K., Wei Su-Huai 35th IEEE Photovoltaic Specialists Conference . 2010

机译：CdS / CdTe太阳能电池中CdTe多晶薄膜的局部电荷中性条件，费米能级和载流子补偿
5. AN INVESTIGATION OF THE PHOTOELECTRIC THRESHOLD, WORK FUNCTION AND BULK FERMI LEVEL OF SINGLE-CRYSTAL CUPROUS-OXIDE, AND THE PHOTOVOLTAIC PROPERTIES OF SINGLE-CRYSTAL AND POLYCRYSTALLINE CUPROUS-OXIDE - COPPER CONTACTS. [D] . ASSIMOS, JOHN ANTHONY. 1973

机译：单晶氧化铜的光电阈值，工作功能和本体费米能级的研究，以及单晶和多晶氧化铜-铜接触的光电特性。
6. Crystalline Quality Composition Homogeneity Tellurium Precipitates/Inclusions Concentration Optical Transmission and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1) [O] . Ana María Martínez, Paula Giudici, Alicia Beatriz Trigubó, 2021

机译：结晶质量组成均匀性碲沉淀物/夹杂物浓度光学传动光学传输和能带隙的Bridgman生长单晶CD1-xZnxte（0≤x≤0.1）
7. Near band gap photoreflectance studies in CdTe, CdTe:V and cdte:ge crystals [O] . U. Pal, J.L. Herrera Pérez, J. Piqueras, 1996

机译：CdTe，CdTe：V和CdTe：Ge晶体附近的带隙光学光反射研究

Energy band gap, intrinsic carrier concentration, and Fermi level of CdTe bulk crystal between 304 and 1067 K

摘要

著录项

相似文献

相关主题

期刊订阅