Visible photoluminescence from plasma-synthesized SiO_2-buffered SiN_x films: Effect of film thickness and annealing temperature

M. Xu; S. Xu; J. W. Chai; J. D. Long; Q. J. Cheng; Y. C. Ee; K. Ostrikov

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Visible photoluminescence from plasma-synthesized SiO_2-buffered SiN_x films: Effect of film thickness and annealing temperature

机译：等离子体合成的SiO_2缓冲的SiN_x薄膜的可见光致发光：薄膜厚度和退火温度的影响

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The effect of the film thickness and postannealing temperature on visible photoluminescence (PL) from SiN_x films synthesized by plasma-assisted radio frequency magnetron sputtering on SiO_2 buffer layers is investigated. It is shown that strong visible P

机译：研究了膜厚和退火后温度对SiO_2缓冲层上等离子体辅助射频磁控溅射合成的SiN_x薄膜可见光致发光（PL）的影响。可见强P

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来源
《Journal of Applied Physics》 |2008年第5期|218-223|共6页
作者
M. Xu; S. Xu; J. W. Chai; J. D. Long; Q. J. Cheng; Y. C. Ee; K. Ostrikov;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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专利

1. Enhancement of visible photoluminescence in the SiN_x films by SiO_2 buffer and annealing [J] . M. Xu, S. Xu, J. W. Chai, Applied Physics Letters . 2006,第25期

机译：SiO_2缓冲和退火增强SiN_x薄膜的可见光致发光。
2. Photoluminescence from SiO_x thin films: effects of film thickness and annealing temperature [J] . Y C Fang, W Q Li, L J Qi Nanotechnology . 2004,第5期

机译：SiO_x薄膜的光致发光：薄膜厚度和退火温度的影响
3. Effects of annealing temperature, thickness and substrates on optical properties of m-plane ZnO films studied by photoluminescence and temperature dependent ellipsometry [J] . Liu Yao, He Tianyu, Chen Daihua, Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2020,第1期

机译：通过光致发光和温度依赖性椭圆形测量研究的M平面ZnO膜光学性能的退火温度，厚度和基材的影响
4. Visible photoluminescence from Si nanocrystals fabricated in SiO{sub}2 films after annealing under hydrostatic pressure [C] . Konstantin S. Zhurvlev, Ida E. Tyschenko, Evgeny N. Vandyshev, Siberian Russian Student Workshop on Electron Devices and Materials . 2002

机译：在静水压力下退火后SiO {Sub} 2薄膜制造的Si纳米晶体的可见光致发光
5. The Influence of Hydrogen Annealing and Substrate Temperature on the Properties of RF Sputtered Zinc Oxide Thin Films [D] . Olanrewaju, Alade Ibrahim. 2014

机译：氢退火和衬底温度对射频溅射氧化锌薄膜性能的影响
6. Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing [O] . Ming-Yue Fu, Jen-Hwan Tsai, Cheng-Fu Yang, 2008

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7. Visible photoluminescence from plasma-synthesized SiO 2-buffered SiN x films : effect of film thickness and annealing temperature [O] . Xu M., Xu S., Chai J.W., 2008

机译：等离子体合成的SiO 2缓冲的SiN x薄膜的可见光致发光：薄膜厚度和退火温度的影响
8. Room Temperature Thin Film Ba(x)Sr(1-x)TiO3 Ku-Band Coupled MicrostripPhase Shifters: Effects of Film Thickness, Doping, Annealing and Substrate Choice [R] . VanKeuls, F. W., Mueller, C. H., Miranda, F. A., 1999

机译：室温薄膜Ba（x）sr（1-x）TiO3 Ku波段耦合微带相移器：膜厚度，掺杂，退火和基板选择的影响

Visible photoluminescence from plasma-synthesized SiO_2-buffered SiN_x films: Effect of film thickness and annealing temperature

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