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Enhancement in the photocatalytic nature of nitrogen-doped PVD-grown titanium dioxide thin films

机译:掺杂氮的PVD生长的二氧化钛薄膜的光催化性能增强

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Nitrogen-doped titanium dioxide semiconductor photocatalytic thin films have been deposited by unbalanced reactive magnetron physical vapor deposition on glass substrates for self-cleaning applications. In order to increase the photocatalytic efficiency of the titania coatings, it is important to enhance the catalysts absorption of light from the solar spectra. Bearing this fact in mind, a reduction in the titania semiconductor band-gap has been attempted by using nitrogen doping from a coreactive gas mixture of N_2:O_2 during the titanium sputtering process. Rutherford backscattering spectroscopy was used in order to assess the composition of the titania thin films, whereas heavy-ion elastic recoil detection analysis granted the evaluation of the doping level of nitrogen. X-ray photoelectron spectroscopy provided valuable information about the cation-anion binding within the semiconductor lattice. The as-deposited thin films were mostly amorphous, however, after a thermal annealing in vacuum at 500 ℃ the crystalline polymorph anatase and rutile phases have been developed, yielding an enhancement in the crystallinity. Spectroscopic ellipsometry experiments enabled the determination the refractive index of the thin films as a function of the wavelength, while from the optical transmittance it was possible to estimate the semiconductor indirect band-gap of these coatings, which has been proven to decrease as the N-doping increases. The photocatalytic performance of the titania films has been characterized by the degradation rate of an organic reactive dye under UV/visible irradiation. It has been found that for a certain critical limit of 1.19 at. % of nitrogen doping in the titania anatase crystalline lattice enhances the photocatalytic behavior of the thin films and it is in accordance with the observed semiconductor band-gap narrowing to 3.18 eV. By doping the titania lattice with nitrogen, the photocatalytic activity is enhanced under both UV and visible light.
机译:氮掺杂的二氧化钛半导体光催化薄膜已通过不平衡反应磁控管物理气相沉积法沉积在玻璃基板上,用于自清洁。为了提高二氧化钛涂层的光催化效率,重要的是增强催化剂吸收太阳光谱中的光。牢记这一事实,已经尝试通过在钛溅射过程中使用来自N_2:O_2的芯活性气体混合物的氮掺杂来减少二氧化钛半导体的带隙。为了评估二氧化钛薄膜的成分,使用了卢瑟福背散射光谱法,而重离子弹性反冲检测分析法则可以评估氮的掺杂水平。 X射线光电子能谱提供了有关半导体晶格内阳离子-阴离子结合的有价值的信息。沉积后的薄膜大部分是非晶态的,但是,在真空中于500℃进行热退火后,已经形成了结晶多晶型锐钛矿和金红石相,从而提高了结晶度。椭圆偏振光谱实验可以确定薄膜的折射率与波长的关系,而根据光透射率可以估算出这些涂层的半导体间接带隙,事实证明随着N-掺杂增加。二氧化钛膜的光催化性能已经通过有机活性染料在紫外/可见光照射下的降解速率来表征。已经发现对于1.19at的某个临界极限。二氧化钛锐钛矿晶格中氮的掺杂百分比提高了薄膜的光催化性能,这与观察到的半导体带隙变窄至3.18 eV一致。通过用氮掺杂二氧化钛晶格,在紫外线和可见光下都增强了光催化活性。

著录项

  • 来源
    《Journal of Applied Physics》 |2009年第11期|113535.1-113535.8|共8页
  • 作者单位

    Centre of Physics-GRF, University of Minho, 4800-058 Guimaraes, Portugal;

    Centre of Physics-GRF, University of Minho, 4800-058 Guimaraes, Portugal;

    Centre of Physics-GRF, University of Minho, 4800-058 Guimaraes, Portugal;

    Centre of Physics-GRF, University of Minho, 4800-058 Guimaraes, Portugal;

    Centre of Physics-GRF, University of Minho, 4800-058 Guimaraes, Portugal;

    Ion Beam Laboratory (ITN), EN 10, 2686-953 Sacavem, Portugal;

    Ion Beam Laboratory (ITN), EN 10, 2686-953 Sacavem, Portugal;

    Forschungszentrum Dresden Rossendorf, D-01314 Dresden, Germany;

    PhyMat, University of Poitiers, 86962 Futuroscope-Chasseneuil, France;

    PhyMat, University of Poitiers, 86962 Futuroscope-Chasseneuil, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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