机译:在m面和c面GaN衬底上生长的InGaN / GaN量子阱的依赖于激发电流的阴极发光研究
Department of Electrical and Computer Engineering, North Carolina State University, Box 7911, Raleigh, North Carolina 27695, USA;
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695, USA Kyma Technologies, Inc., Raleigh, North Carolina 27617, USA;
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695, USA;
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695, USA;
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695, USA;
Department of Electrical and Computer Engineering, North Carolina State University, Box 7911, Raleigh, North Carolina 27695, USA;
Kyma Technologies, Inc., Raleigh, North Carolina 27617, USA;
Kyma Technologies, Inc., Raleigh, North Carolina 27617, USA;
Kyma Technologies, Inc., Raleigh, North Carolina 27617, USA;
机译:在m面GaN衬底和c面蓝宝石上生长的InGaN / GaN量子阱中掺入铟
机译:洞察原子和纳米级铟分布对在m平面独立GaN衬底上生长的InGaN / GaN量子阱结构的光学性能的影响
机译:洞察原子和纳米级铟分布对在M平面独立GaN基材上生长的Ingan / GaN量子井结构的光学性质的影响
机译:在LiAlO_2(001)衬底上生长的非极性m面GaN膜和极化的InGaN / GaN LED
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:在a平面和m平面GaN衬底上生长的InGaN / GaN多量子阱的光学和偏振特性的研究
机译:生长在a面和m面GaN衬底上的InGaN / GaN多量子阱的光学和偏振特性的研究