Stimulated Raman up conversion of a helicon by band-gap energy plasmons in a semiconductor

摘要

Stimulated Raman up conversion of a helicon wave in a semiconductor, where free carrier plasma frequency equals band-gap energy divided by Planck's constant, is investigated. The stimulated electron hole recombination drives a Langmuir wave. The free carrier density oscillations associated with the Langmuir wave couple with the free carrier oscillatory velocities due to the helicon and derive a sum frequency radiation. The radiation and helicon exert a ponderomotive force on free carriers that influences the Langmuir wave.