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首页> 外文期刊>Journal of Applied Physics >The sintering properties and interfacial investigation of barium ferrite and ceramic cofiring system for the application of LTCC technology
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The sintering properties and interfacial investigation of barium ferrite and ceramic cofiring system for the application of LTCC technology

机译:LTCC技术应用钡铁氧体与陶瓷共烧系统的烧结性能及界面研究

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摘要

The BaFe_(12)O_(19) ferrite and BaTiO_3 ceramic nanoparticles were synthesized by sol-gel method, respectively. In order to involve the different functional materials and to improve the packaging density of devices using low temperature cofired ceramic technology, different content Bi_2O_3·B_2O_3·SiO_2·ZnO as the sintering additives were added to lower the sintering temperature at 920 ℃. The layers of BaFe_(12)O_(19) ferrite and BaTiO_3 ceramic prepared by tape casting were stocked alternately. The sintering properties and interfacial diffusion of cofired system were studied. Scanning electronic microscopy observation of the multilayer sample indicates obvious warp at the interface due to the sintering mismatch between ferrite and ceramic. The cofiring property of BaFe_(12)O_(19) and BaTiO_3 is modified by adjusting the composition of the slurry and a crack-free multilayer structure could be obtained. The results prove that this cofiring system could be used for the fabrication of broadband and high frequency of chip electronic components.
机译:通过溶胶-凝胶法分别合成了BaFe_(12)O_(19)铁氧体和BaTiO_3陶瓷纳米粒子。为了利用低温共烧陶瓷技术来包含不同的功能材料并提高器件的封装密度,添加了不同含量的Bi_2O_3·B_2O_3·SiO_2·ZnO作为烧结助剂,降低了920℃的烧结温度。通过带式铸造制备的BaFe_(12)O_(19)铁氧体和BaTiO_3陶瓷层交替存放。研究了共烧体系的烧结性能和界面扩散。多层样品的扫描电子显微镜观察表明,由于铁素体和陶瓷之间的烧结失配,在界面处有明显的翘曲。通过调节浆料的组成可以改变BaFe_(12)O_(19)和BaTiO_3的共烧性能,从而获得无裂纹的多层结构。结果证明该共烧系统可用于宽带和高频电子芯片的制造。

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  • 来源
    《Journal of Applied Physics》 |2009年第2期|327-329|共3页
  • 作者单位

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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