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首页> 外文期刊>Journal of Applied Physics >Granular L1_0 FePt-X(X=C, TiO_2, Ta_2O_5) (001) nanocomposite films with small grain size for high density magnetic recording
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Granular L1_0 FePt-X(X=C, TiO_2, Ta_2O_5) (001) nanocomposite films with small grain size for high density magnetic recording

机译:高密度磁记录的小粒径L1_0 FePt-X(X = C,TiO_2,Ta_2O_5)(001)纳米复合薄膜

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摘要

FePt-X (X=C, TiO_2, Ta_2O_5) nanocomposite films were deposited on MgO/CrRu/glass substrates at 350 ℃ by magnetron cosputtering. The comparison investigations on the magnetic properties and microstructure of FePt-X films with various dopants were conducted. All FePt-X films showed (001) preferred orientation and oxide dopants promoted the formation of magnetically soft fcc FePt phase. With 15 vol % C doping, FePt-C film with columnar grains of 7.5 nm was obtained and the out-of-plane coercivity measured at room temperature was as high as 14.4 kOe. The increase in carbon volume fraction to 20% caused the formation of two-layer structure, whereas for the 20 vol % TiO_2 and Ta_2O_5 doping, the columnar structure of the FePt films remained and the corresponding grain sizes were 5 and 10 nm, respectively. Ta_2O_5 doping showed better grain isolation than the others. The out-of-plane coercivities of FePt-TiO_2 and FePt-Ta_2O_5 films were 7.5 and 8.8 kOe, respectively.
机译:FePt-X(X = C,TiO_2,Ta_2O_5)纳米复合膜通过磁控共溅射在350℃下沉积在MgO / CrRu /玻璃衬底上。对不同掺杂剂的FePt-X薄膜的磁性和微观结构进行了比较研究。所有FePt-X薄膜均显示(001)较好的取向,并且氧化物掺杂剂促进了磁性软fcc FePt相的形成。通过15vol%的C掺杂,获得具有7.5nm的柱状晶粒的FePt-C膜,并且在室温下测量的面外矫顽力高达14.4kOe。碳体积分数增加到20%导致形成了两层结构,而对于20 vol%的TiO_2和Ta_2O_5掺杂,FePt膜保留了柱状结构,相应的晶粒尺寸分别为5 nm和10 nm。 Ta_2O_5掺杂显示出比其他掺杂更好的晶粒隔离。 FePt-TiO_2和FePt-Ta_2O_5膜的面外矫顽力分别为7.5和8.8 kOe。

著录项

  • 来源
    《Journal of Applied Physics》 |2009年第2期|677-679|共3页
  • 作者单位

    Department of Materials Science & Engineering, National University of Singapore, Singapore 117576, Singapore;

    Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117576, Singapore;

    Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117576, Singapore;

    Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117576, Singapore;

    Department of Materials Science & Engineering, National University of Singapore, Singapore 117576, Singapore;

    Seagate Technology, Pittsburgh, Pennsylvania, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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