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机译:后退火对排列良好的n-ZnO纳米棒/ p-Si异质结的电学性能的影响
State Key Laboratory of ASIC and Systems, Department of Microelectronics, Fudan University, Shanghai 200433, 'China;
State Key Laboratory of ASIC and Systems, Department of Microelectronics, Fudan University, Shanghai 200433, 'China;
State Key Laboratory of ASIC and Systems, Department of Microelectronics, Fudan University, Shanghai 200433, 'China;
State Key Laboratory of ASIC and Systems, Department of Microelectronics, Fudan University, Shanghai 200433, 'China;
State Key Laboratory of ASIC and Systems, Department of Microelectronics, Fudan University, Shanghai 200433, 'China;
机译:对齐良好的ZnO纳米棒,用于器件应用:ZnO纳米棒和n-ZnO / p-Si异质结二极管的合成与表征
机译:n-ZnO六角形纳米棒/ p-Si异质结二极管的制造和表征:随温度变化的电学特性
机译:n-ZnO纳米棒/ p-Si异质结的制备和阻抗分析,以研究Zn / O源比调谐的ZnO纳米棒阵列中的载流子浓度。
机译:对N-ZnO / P-Si异质结二极管电和光学性能的退火效应
机译:具有和不具有界面层的n-ZnO / p-Si单异质结太阳能电池的开发。
机译:高温N- ZnO纳米棒/ P-退化金刚石异质结的负差分电阻
机译:晶界对n-ZnO:Al / p-Si异质结二极管电性能的影响